Browsing by Subject "Zinc sulfide"

Now showing items 1-5 of 5

    • Article  

      Gallium hydride vapor phase epitaxy of GaN nanowires 

      Zervos, Matthew; Othonos, Andreas S. (2011)
      Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
    • Article  

      Gallium hydride vapor phase epitaxy of GaN nanowires 

      Zervos, Matthew; Othonos, A. (2011)
      Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
    • Article  

      The nitridation of ZnO nanowires 

      Zervos, Matthew; Karipi, C.; Othonos, Andreas S. (2012)
      ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
    • Article  

      The nitridation of ZnO nanowires 

      Zervos, Matthew; Karipi, C.; Othonos, A. (2012)
      ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
    • Article  

      A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties 

      Othonos, A.; Zervos, Matthew; Christofides, C. (2010)
      GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 μm have been obtained from postgrowth nitridation of monoclinic Β-Ga2O3 NWs using NH3 between 700-1090 °C. The conversion ...